Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
部品番号
コンポーネント説明
HYS64V2100GCU-10 データシートの表示(PDF) - Siemens AG
部品番号
コンポーネント説明
メーカー
HYS64V2100GCU-10
3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module
Siemens AG
HYS64V2100GCU-10 Datasheet PDF : 12 Pages
1
2
3
4
5
6
7
8
9
10
Next
Last
HYS64(72)V2100G(C)U-10
2M x 64/72 SDRAM-Module
AC Characteristics
3)4)
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
CC
= 3.3 V
±
0.3 V,
t
T
= 1 ns
Parameter
Symbol
Limit Values
-10
min
max
Unit
Note
Clock and Clock Enable
Clock Cycle Time
t
CK
CAS Latency = 3
10
ns
CAS Latency = 2
15
ns
CAS Latency = 1
30
ns
System Frequency
f
CK
CAS Latency = 3
CAS Latency = 2
CAS Latency = 1
–
100 MHz
–
66 MHz
–
33 MHz
Clock Access Time
t
AC
CAS Latency = 3
CAS Latency = 2
CAS Latency = 1
–
8
ns
5
–
9
ns
–
27 ns
Clock High Pulse Width
t
CH
3.5
Clock Low Pulse Width
t
CL
3.5
CKE Setup Time
t
CKS
3
CKE Hold Time
t
CKH
1
CKE Setup Time (Power down mode)
t
CKSP
3
CKE Setup Time (Self Refresh Exit)
t
CKSR
8
Transition time (rise and fall)
t
T
1
–
ns
–
ns
–
ns
6
–
ns
6
–
ns
6
–
ns
8
30 ns
Common Parameters
Command Setup time
Command Hold Time
Address Setup Time
Address Hold Time
RAS to CAS delay
Cycle Time
Active Command Period
Precharge Time
t
CS
3
–
ns
6
t
CH
1
–
ns
6
t
AS
3
–
ns
6
t
AH
1
–
ns
6
t
RCD
30
–
ns
t
RC
75
120k
ns
t
RAS
45
120k
ns
t
RP
30
–
ns
Semiconductor Group
7
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]