DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IS61SP6464 データシートの表示(PDF) - Integrated Silicon Solution

部品番号
コンポーネント説明
メーカー
IS61SP6464
ISSI
Integrated Silicon Solution ISSI
IS61SP6464 Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IS61SP6464
ISSI ®
POWER SUPPLY CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
-133 -117 -100 -6
-7
-8
Max. Max. Max. Max. Max. Max. Unit
ICC
AC Operating
Device Selected,
Supply Current
All Inputs = VIL or VIH
OE = VIH,
Cycle Time tKC min.
Com. 280 270 250 200 170 150 mA
Ind. 290 270 220 190 170
ISB1
Standby Current Device Deselected,
Com. 70
70
70
70
70
70
mA
TTL Inputs
VCC = Max.,
Ind.
80
80
80
80
80
All Inputs = VIH or VIL
CLK Cycle Time tKC min.
ISB2
Standby Current Device Deselected,
Com. 20
20
20
20
20
20
mA
CMOS Inputs
VCC = Max.,
Ind.
30
30
30
30
30
VIN = VCC 0.2V, or VIN - 0.2V
CLK Cycle Time tKC min.
IZZ
Power-Down Mode ZZ = VCCQ, CLK Running
Com. 20
20
20
20
20
20
mA
Current
All Inputs - GND + 0.2V
Ind.
30
30
30
30
30
or VCC 0.2V
Notes:
1. The MODE pin has an internal pullup. ZZ pin has an internal pull-down. This pin may be a No Connect, tied to GND, or tied to
VCCQ.
2. The MODE pin should be tied to Vcc or GND. It exhibits ±10 µA maximum leakage current when tied to - GND + 0.2V
or Vcc 0.2V.
8
Integrated Silicon Solution, Inc. 1-800-379-4774
Rev. A
04/17/01

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]