J308 データシートの表示（PDF） - ON Semiconductor
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J308 Datasheet PDF : 6 Pages
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J308
50 Ω
SOURCE
U310
C3
L1 C1
C5
L2P
C2
C6
50 Ω
LOAD
L2S
C4
C7
1.0 k
RFC
+VDD
C1 = C2 = 0.8 − 10 pF, JFD #MVM010W.
C3 = C4 = 8.35 pF Erie #539−002D.
C5 = C6 = 5000 pF Erie (2443−000).
C7 = 1000 pF, Allen Bradley #FA5C.
RFC = 0.33 μH Miller #9230−30.
L1 = One Turn #16 Cu, 1/4″ I.D. (Air Core).
L2P = One Turn #16 Cu, 1/4″ I.D. (Air Core).
L2S = One Turn #16 Cu, 1/4″ I.D. (Air Core).
Figure 1. 450 MHz Common−Gate Amplifier Test Circuit
70
60
VDS = 10 V
50
IDSS
40
+25 °C
70
60
TA = −55°C
50
+25 °C
40
30
+150°C 30
20
+25 °C
20
−55 °C
10
+150°C 10
0
−5.0
−4.0
−3.0
−2.0
−1.0
0
ID − VGS, GATE−SOURCE VOLTAGE (VOLTS)
IDSS − VGS, GATE−SOURCE CUTOFF VOLTAGE (VOLTS)
Figure 2. Drain Current and Transfer
Characteristics versus Gate−Source Voltage
35
30
VDS = 10 V
f = 1.0 MHz
25
TA = −55°C
+25 °C
20
+150°C
15
+25 °C
10
−55 °C
+150°C
5.0
0
5.0
4.0
3.0
2.0
1.0
0
VGS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 3. Forward Transconductance
versus Gate−Source Voltage
100 k
10 k
1.0 k
Yfs
Yfs
100
1.0 k
VGS(off) = −2.3 V =
10
Yos
VGS(off) = −5.7 V =
100
0.01
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
ID, DRAIN CURRENT (mA)
Figure 4. Common−Source Output
Admittance and Forward Transconductance
versus Drain Current
10
120
RDS
96
7.0
72
Cgs
4.0
48
Cgd
24
1.0
0
0
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 5. On Resistance and Junction
Capacitance versus Gate−Source Voltage
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