KSC5020 データシートの表示（PDF） - Fairchild Semiconductor
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KSC5020 Datasheet PDF : 5 Pages
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KSC5020
High Voltage, High Quality
• High Speed Switching : tF=0.1µs
• Wide SOA
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
VCEX(sus)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
IC = 1mA, IE = 0
IC = 5mA, IB = 0
IE = 1mA, IC = 0
IC = 1.5A, IB1=-IB2= 0.6A
L = 2mH, Clamped
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
Cob
fT
tON
tSTG
tF
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
VCB = 500V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 0.3A
VCE = 5V, IC = 1.5A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
VCB = 10V, f = 1MHz
VCE = 10V, IC = 0.3A
VCC = 200V
IC=5IB1 = -2.5IB2=2A
RL = 100Ω
hFE Classification
Classification
hFE1
R
15 ~ 30
O
20 ~ 40
Value
800
500
7
3
6
1
40
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Min.
800
500
7
500
Typ.
Max.
Units
V
V
V
V
10
µA
10
µA
15
50
8
1
V
1.5
V
50
pF
18
MHz
0.5
µs
3
µs
0.3
µs
Y
30 ~ 50
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
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