KSC5020 データシートの表示（PDF） - Fairchild Semiconductor

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KSC5020

NPN Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

5

4

I = 500mA

B

3

I = 400mA

B

I = 300mA

B

I = 200mA

2

B

IB = 100mA

I = 50mA

1

B

I = 20mA

B

I =0

0

B

0

2

4

6

8

10

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

10

1

VBE(sat)

I =5I

C

B

0.1

VCE(sat)

0.01

0.01

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

4

V = 5V

CE

3

2

1

0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VBE[V], BASE-EMITTER VOLTAGE

Figure 5. Base-Emitter On Voltage

©2002 Fairchild Semiconductor Corporation

1000

100

10

1

0.01

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 2. DC current Gain

10

V = 200V

CC

I = 5I = -2.5I

C

B1

B2

tSTG

1

tON

tF

0.1

0.01

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 4. Turn On, Storage and Fall Time vs.

Collector Current

100

10 ICP(max)

I (max)

C

1

0.1

P

C

=40W

10ms1ms

DC

50µs

100µs

0.01

1E-3

1

10

100

1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 6. Forward Bias Safe Operating Area

Rev. B1, December 2002

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