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L6590N データシートの表示(PDF) - STMicroelectronics

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L6590N
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L6590N Datasheet PDF : 23 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Condition
CIRCUIT PROTECTIONS
Ipklim Pulse-by-pulse Current Limit
di/dt = 120 mA/ µs
OVP Overvoltage Protection
Icc = 10 mA (*)
LEB Masking Time
After MOSFET turn-on (**)
STANDBY SECTION
FSB Oscillator Frequency
Ipksb
Peak switch current for Standby Transition from Fosc to FSB
Operation
Ipkno Peak switch current for Normal
Operation
Transition from FSB to Fosc
BROWNOUT PROTECTION (L6590D only)
Vth Threshold Voltage
Voltage either rising or falling
IHys Current Hysteresis
Vpin = 3V
VCL Clamp Voltage
Ipin = 0.5 mA
THERMAL SHUTDOWN (***)
Threshold
Hysteresis
(*) Parameters tracking one the other
(**) Parameter guaranteed by design, not tested in production
(***) Parameters guaranteed by design, functionality tested in production
L6590
Min. Typ. Max. Unit
550 625 700 mA
16
16.5
17
V
120
ns
19
22
25
kHz
80
mA
190
mA
2.4
2.5
2.6
V
-30
-50
-70
µA
5.6
6.4
7.2
V
150 165
°C
40
°C
Figure 1. Start-up & UVLO Thresholds
Vcc [V]
16
14
Start-up
12
10
8
UVLO
6
-50
0
50
100
150
Tj [°C]
Figure 2. Start-up Current Generator
Icc [mA]
5.5
Vdrain = 40 V
5
Tj = -25 °C
4.5
Tj = 25 °C
4
3.5
Tj = 125 °C
3
0
2
4
6
8
10 12
Vcc [V]
5/23

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