Philips Semiconductors
General purpose diodes
Product specification
BAV100 to BAV103
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VRRM
VR
IF
IFRM
IFSM
Ptot
Tstg
Tj
repetitive peak reverse voltage
BAV100
BAV101
BAV102
BAV103
continuous reverse voltage
BAV100
BAV101
BAV102
BAV103
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 100 µs
t=1s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
60 V
−
120 V
−
200 V
−
250 V
−
50 V
−
100 V
−
150 V
−
200 V
−
250 mA
−
625 mA
−
9A
−
3A
−
1A
−
400 mW
−65
+175 °C
−
175 °C
1996 Sep 17
3