MPSA14 データシートの表示（PDF） - Secos Corporation.
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MPSA14 Datasheet PDF : 3 Pages
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FEATURES
MPSA13 / 14
NPN Epitaxial Silicon Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
Darlington TRANSISTOR
Power dissipation
1
23
PCM:
0.625 W (Tamb=25℃)
Collector current
ICM:
0.5
A
Collector-base voltage
V(BR)CBO:
30
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
1 23
1. EMITTER
2. BASE
3 . COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
Test conditions
V(BR)CBO
Ic= 100µA, IE=0
V(BR)CEO
IC= 1mA , IB=0
V(BR)EBO
IE= 100µA, IC=0
ICBO
VCB= 30V, IE=0
IEBO
HFE(1) *
HFE(2) *
VCE(sat) *
VEB= 10V, IC=0
VCE=5V, IC=10mA
MPSA13
MPSA14
VCE=5V, IC=100mA MPSA13
MPSA14
IC= 100mA, IB=0.1 mA
VBE(on) *
VCE=5V, IC= 100mA
fT
VCE=5V, IC= 10mA , f=100MHz
MIN
30
30
10
5000
10000
10000
20000
125
MAX
0.1
0.1
1.5
2.0
UNIT
V
V
V
µA
µA
V
V
MHz
* Pulse Test: pulse width 300µs, duty cycle 2%.
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3
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