MPSA194G(2014) データシートの表示（PDF） - Unisonic Technologies

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MPSA194G
(Rev.:2014)

PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

MPSA194

PNP SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

-400

V

Collector to Emitter Voltage

VCEO

-400

V

Emitter to Base Voltage

VEBO

-6

V

Collector Current

IC

-800

mA

Collector Dissipation (TA=25C)

PC

1.0

W

Junction Temperature

TJ

150

C

Storage Temperature

TSTG

-55 ~ +150

C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TJ =25C, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collect Cut-off Current

Collect Cut-off Current

Emitter Cut-off Current

DC Current Gain

Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Output Capacitance

Current Gain Bandwidth Product

SYMBOL

TEST CONDITIONS

BVCBO IC =-100µA, IE =0A

BVCEO IC =-1mA, IB =0A

ICBO VCB =-400 V, IE =0A

ICEO VCB =-200 V, VBE =0V

IEBO VEB = -6 V, IC =0A

VCE =-10 V ,IC =-1mA

hFE VCE =-10 V ,IC =-20mA

VCE =-10 V ,IC =-80mA

VBE(SAT) IC =-20mA, IB =- 2mA

VCE(SAT)

IC =-20mA, IB =- 4mA

IC =-80mA, IB =- 2mA

COB VCB =-20 V, IE =0A, f =1MHz

fT VCE =-20V, IE =-10A, f =1MHz

MIN

-400

-400

50

50

40

10

TYP

MAX UNIT

V

V

-10 µA

-1 µA

-0.2 µA

800

-0.9 V

-0.2 V

-1.2 V

30 pF

MHZ

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R201-026.E

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