MX29F200B データシートの表示（PDF） - Macronix International

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MX29F200B

2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY

Macronix International 

MX29F200T/B

AC CHARACTERISTICS

29F200T/B-55 29F200T/B-70

SYMBOL PARAMETER

MIN. MAX. MIN. MAX.

tACC

Address to Output Delay

55

70

tCE

CE to Output Delay

55

70

tOE

OE to Output Delay

20

40

tDF

OE High to Output Float (Note1) 0

20

0

20

tOH

Address to Output hold

0

0

UNIT CONDITIONS

ns CE=OE=VIL

ns OE=VIL

ns CE=VIL

ns CE=VIL

ns CE=OE=VIL

29F200T/B-90 29F200T/B-12

SYMBOL PARAMETER

MIN. MAX. MIN. MAX.

UNIT CONDITIONS

tACC

Address to Output Delay

90

120

ns CE=OE=VIL

tCE

CE to Output Delay

90

120

ns OE=VIL

tOE

OE to Output Delay

40

50

ns CE=VIL

tDF

OE High to Output Float (Note1) 0

30

0

30

ns CE=VIL

tOH

Address to Output hold

0

0

ns CE=OE=VIL

TEST CONDITIONS:

• Input pulse levels: 0.45V/2.4V for 70ns max, 0V/3V for

55ns

• Input rise and fall times: is equal to or less than 10ns

for 70ns max,5ns for 55ns

• Output load: 1 TTL gate + 100pF (Including scope and

jig) for 70ns max.

:1TTLgate+30pF for 55ns max.

• Reference levels for measuring timing: 0.8V, 2.0V for

70ns max.;1.5V for 55ns

NOTE:

1.tDF is defined as the time at which the output achieves the

open circuit condition and data is no longer driven.

READ TIMING WAVEFORMS

VIH

A0~16

VIL

VIH

CE

VIL

WE

VIH

VIL

OE

VIH

VIL

ADD Valid

tCE

tOE

tACC

tDF

tOH

DATA

Q0~7

VOH HIGH Z

VOL

P/N:PM0549

DATA Valid

20

HIGH Z

REV. 1.3 , DEC. 24, 2001

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