NE38018 データシートの表示（PDF） - NEC => Renesas Technology

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NE38018

L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET

NEC => Renesas Technology 

NE38018

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Parameter

Symbol

Test Conditions

Gate to Source Leak Current

IGSO

VGS = –3 V

Saturated Drain Current

IDSS

VDS = 2 V VGS = 0 V

Gate to Source Cut off Voltage

VGS(off)

VDS = 2 V IDS = 100 µA

Transconductance

gm

VDS = 2 V IDS = 5 mA

Noise Figure

NF

VDS = 2 V IDS = 5 mA

Associated Gain

Ga

f = 2 GHz

Power Gain

Gs

Output Power at 1 dB Gain

P0(1 dB)

VDS = 3 V IDS = 30 mA

Compression Point

f = 2 GHz

Output Third-Order Distortion

OIP3

VDS = 2 V IDS = 5 mA

Intercept Point

f = 2 GHz

IDSS CLASSIFICATIONS

Rank

IDSS (mA)

67

40 to 90

68

70 to 170

Marking

V67

V68

DIMENSIONS (Unit: mm)

2.1±0.2

1.25±0.1

MIN.

–

40

–0.1

50

–

12.5

–

–

–

–

–

TYP.

1.0

–

–

–

0.55

14.5

16

17 (V67)

18 (V68)

22 (V67)

23 (V68)

MAX.

20

170

–1.5

–

1.0

–

–

–

–

–

–

Unit

µA

mA

V

mS

dB

dB

dB

dBm

dBm

PIN CONNECTIONS

1. Source

2. Gate

3. Source

4. Drain

Preliminary Data Sheet

2

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