NE651R479A-A データシートの表示（PDF） - California Eastern Laboratories.

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NE651R479A-A

NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET

California Eastern Laboratories. 

NE651R479A

TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 5 V, f = 2.66 GHz

OUTPUT POWER vs. INPUT POWER

34 Test Condition: Circuit optimized

for P-2dB from 2.64 to 2.69 GHz

32 Instantaneous Bandwidth when

biasing at 5 V 50 mA

30

28

26

24

20

18

16

8

50 mA

150 mA

300 mA

100 mA

200 mA

350 mA

10 12 14 16 18 20 22 24 26 28

Input Power, PIN (dBm)

THIRD ORDER INTERMODULATION vs.

TOTAL OUTPUT POWER

-20

Test Condition: Circuit optimized

for P-2dB from 2.64 to 2.69 GHz

Instantaneous Bandwidth when

-25 biasing at 5 V 50 mA

-30

-35

-40

-45

-50

16

50 mA

150 mA

300 mA

100 mA

200 mA

350 mA

18

20

22

24

26

28

Total Output Power, POUT (dBm)

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