NIS5101 データシートの表示（PDF） - ON Semiconductor

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NIS5101

Inrush Limiter/Circuit Breaker

ON Semiconductor 

NIS5101

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ Max Unit

POWER FET

Charging Time (Turn−On to Rated Max Current)

ON Resistance

Zero Gate Voltage Drain Current

(VDS = 100 Vdc, VGS = 0 Vdc)

tchg

RDSon

IDSS

−

5.0

−

ms

−

43

50

mW

−

10

−

mA

Sense Voltage Tolerance (Vinput = 48 V, RextILIMIT = 20 W)

Output Capacitance (VDS = 48 Vdc, VGS = 0 Vdc, f = 10 kHz)

THERMAL LIMIT

VSense

−

−

3.0

−

%

−

326

−

pF

Shutdown Junction Temperature (Note 4)

Hysteresis (Note 4)

OVER/UNDERVOLTAGE

TSD

Thyst

125

135 145

°C

35

40

45

°C

Turn−On Voltage (RextUVLO = R)

Hysteresis (RextUVLO = R)

Turn−On Voltage (RextUVLO = 270 kW)

Hysteresis (RextUVLO = 270 kW)

Zener Voltage (UVLO Pin Voltage at Turn−On)

OVLO Threshold (Input + Increasing, RextOVLO = R)

OVLO Threshold (Input + Increasing, RextOVLO = 300 kW)

OVLO Hysteresis (Input + Decreasing, RextOVLO = 300 kW)

CURRENT LIMIT

Von

Vhyst

Von

Vhyst

VZ

VOV

VOV

VOVhyst

41.5

46

50.5

V

6.3

8.0

9.7

V

29

33

37

V

3.5

5.0

6.5

V

14.3

16

17.5

V

100

−

−

V

65

74

83

V

3.0

4.7

6.4

V

Short Circuit Current Limit (RextILIMIT = 20 W) (Note 5)

Overload Current Limit (RextILIMIT = 20 W) (Notes 4 and 5)

TOTAL DEVICE

ILIM1

ILIM2

3.5

4.2

5.0

A

5.4

6.0

6.6

A

Bias Current (Operational) (Vinput = 48 V, RUVLO = R)

IBias

−

1.4

−

mA

Bias Current (Non−Operational) (Vinput = 30 V, RUVLO = R)

IBias

−

800

−

mA

Minimum Operating Voltage (RUVLO = 30 kW)

Vinmin

−

18

−

V

2. Pulse Test: Pulse width 300 ms, duty cycle 2%.

3. Switching characteristics are independent of operating junction temperatures.

4. Verified by design.

5. Please refer to explanation about the device’s current limit operation in short circuit and overload conditions.

http://onsemi.com

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