DIODE FORWARD CHARACTERISTICS
(TYPICAL)
102
7 VD = 15V
5
4
3
2
101
7
5
4
3
2
Tj = 25°C
Tj = 125°C
100
0
0.5
1
1.5
2
2.5
EMITTER-COLLECTOR VOLTAGE VEC (V)
ID VS. fc CHARACTERISTICS
(TYPICAL)
100
VD = 15V
Tj = 25°C
80
60
N-side
40
20
P-side
0
0
5
10 15 20 25
CARRIER FREQUENCY fc (kHz)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART)
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
7
5
3 Single Pulse
2 Per unit base = Rth(j – c)F = 2.50°C/ W
10–3
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7101
TIME (s)
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50RSD060
FLAT-BASE TYPE
INSULATED PACKAGE
DIODE REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
100
VCC = 300V
7 VD = 15V
5
4
Tj = 25°C
3
Tj = 125°C
Inductive load
2
102
7
5
4
3
Irr 2
10–1
7
5
4
3
2
101
trr 7
5
4
3
2
10–2
100
100 2 3 4 5 7 101 2 3 4 5 7 102
COLLECTOR RECOVERY CURRENT –IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT PART)
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
7
5
3 Single Pulse
2 Per unit base = Rth(j – c)Q = 1.00°C/ W
10–3
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7101
TIME (s)
Jul. 2005