PUMX1 データシートの表示（PDF） - NXP Semiconductors.
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PUMX1 Datasheet PDF : 8 Pages
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NXP Semiconductors
PUMX1
40 V, 100 mA NPN general-purpose double transistor
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Conditions
Per device
Rth(j-a)
thermal resistance from junction in free air
to ambient
Min Typ Max Unit
[1] -
-
416 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per transistor
ICBO
collector-base cut-off current
IEBO
hFE
VCEsat
fT
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
transition frequency
Cc
collector capacitance
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Conditions
VCB = 30 V;
IE = 0 A
VCB = 30 V;
IE = 0 A;
Tj = 150 °C
VEB = 4 V;
IC = 0 A
VCE = 6 V;
IC = 1 mA
IC = 50 mA;
IB = 5 mA
IC = 2 mA;
VCE = 12 V;
f = 100 MHz
VCB = 12 V;
IE = ie = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
100 nA
-
-
10 μA
-
-
120 -
[1] -
-
100 -
100 nA
-
200 mV
-
MHz
-
-
1.5 pF
PUMX1_4
Product data sheet
Rev. 04 — 20 January 2010
© NXP B.V. 2010. All rights reserved.
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