RB715F データシートの表示（PDF） - Transys Electronics Limited

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RB715F

SCHOTTKY BARRIER DIODE

Transys Electronics Limited 

RB715F SCHOTTKY BARRIER DIODE

FEATURES:

Power dissipation

PD:

200 mW (Tamb=25℃)

Collector current

IF:

30 mA

Collector-base voltage

VR:

40 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

CIRCUIT:

SOT-323

1. 25¡ À0. 05

2. 30¡ À0. 05

Unit: mm

1

3

2

MARKING: 3D

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Reverse breakdown voltage

Reverse voltage leakage current

Symbol

V(BR)

IR

Test conditions

IR= 100µA

VR=10V

MIN

MAX

40

1

Forward voltage

VF

IF=1mA

0.37

Diode capacitance

CD

VR=1V, f=1MHz

5

UNIT

V

µA

V

pF

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