RMB2S(2008) データシートの表示（PDF） - Vishay Semiconductors

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RMB2S
(Rev.:2008)

Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier

Vishay Semiconductors 

RMB2S & RMB4S

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS SYMBOL

RMB2S

RMB4S

Maximum instantaneous forward voltage

drop per diode

0.4 A

VF

1.25

Maximum DC reverse current at rated DC

blocking voltage per diode

TA = 25 °C

TA = 125 °C

IR

5.0

100

Maximum reverse recovery time per diode

IF = 0.5 A, IR = 1.0 A,

Irr = 0.25 A

trr

150

Typical junction capacitance per diode

4.0 V, 1 MHz

CJ

13

UNIT

V

µA

ns

pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

RMB2S

RMB4S

Typical thermal resistance

RθJA

RθJA

RθJL

85 (1)

70 (2)

20 (1)

Notes:

(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads

(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad

UNIT

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE

RMB4S-E3/45

0.22

45

RMB4S-E3/80

0.22

80

BASE QUANTITY

100

3000

DELIVERY MODE

Tube

13" diameter paper tape and reel

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

0.8

0.7

Aluminum Substrate

0.6

0.5

0.4

Glass Epoxy P.C.B.

0.3

0.2

0.1 Resistive or Inductive Load

0

0 20 40 60 80 100 120 140 160

Ambient Temperature (°C)

Figure 1. Maximum Forward Current Derating Curve

35

30

TA = 40 °C

Single Half Sine-Wave

25

20

15 f = 50 Hz

f = 60 Hz

10

5

1.0 Cycle

0

1

10

100

Number of Cycles

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

www.vishay.com

2

For technical questions within your region, please contact one of the following: Document Number: 88705

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Revision: 01-Feb-08

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