SK80GB125T(2007) データシートの表示（PDF） - Semikron
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SK80GB125T Datasheet PDF : 5 Pages
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SK80GB125T
SEMITOP® 3
IGBT Module
SK80GB125T
Preliminary Data
Characteristics
Symbol Conditions
Inverse Diode
.@ ) ./
$@ ) ++ ; .8/ ) 3 .
.@3
@
$556
M
/
$@ ) +3
K ) B433 K?
.) >33.
5 0B
6
N
Temperature sensor
5233
()233, 5*+)+NG
min. typ.
(0 ) *+ ,%D
*
(0 ) 2+3 ,%D
2-4
(0 ) *+ ,
(0 ) 2*+ ,
2-*
(0 ) *+ ,
(0 ) 2*+ ,
22
(0 ) 2*+ ,
C3
4
2
*-*+
:3
CA:9+O
max. Units
.
.
.
.
G
G
?
I
3->+ JKL
*-+
G
Features
!
"
Typical Applications
#
$%
#
&'#
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB - T
2
21-02-2007 SCT
© by SEMIKRON
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