T431616A データシートの表示（PDF） - Taiwan Memory Technology

部品番号

コンポーネント説明

メーカー

T431616A

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Taiwan Memory Technology 

tm TE

CH

T431616A

Read & Write Cycle at Different Bank @ Burst Length = 4

0

1

2

3

4

5

6

7

8

9

10 11 12 13 14 15 16 17 18 19

CLOCK

CKE

H IG H

CS

RAS

CAS

ADDR

RAa

CAa

RBb

CBb RAc

CAc

BA

A 10/A P

RAa

CL=2

DQ

CL=3

RBb

Q A a0 Q A a1 Q A a2 Q A a3

Q A a0 Q A a1 Q A a2 Q A a3

RAc

tC D L

*N ote1

DBb0 DBb1 DBb2 DBb3

Q A c0 Q A c1 Q A c2

DBb0 DBb1 DBb2 DBb3

Q A c0 Q A c1

WE

DQM

R o w A ctiv e

(A -B ank)

R ead (A -

B ank)

R o w A ctiv e

(B -B ank)

P recharge

(A -B ank)

W rite (B -

B ank)

R o w A ctiv e

(A -B ank)

R ead (A -

B ank)

:D o n 't c a re

*Note : 1. tCDL should be met to complete write.

Taiwan Memory Technology, Inc. reserves the right P.21

to change products or specifications without notice.

Publication Date: DEC. 2000

Revision: C

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