TMP01GBC データシートの表示（PDF） - Analog Devices
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TMP01GBC Datasheet PDF : 16 Pages
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TMP01
WAFER TEST LIMITS (VDD = +5.0 V, GND = 0 V, TA = +25؇C, unless otherwise noted)
Parameter
Symbol
Conditions
Min Typ Max
Units
INPUTS SET HIGH, SET LOW
Input Bias Current
IB
100
nA
OUTPUT VPTAT
Temperature Accuracy
TA = +25°C, No Load
1.5
°C
OUTPUT VREF
Nominal Value
Line Regulation
Load Regulation
VREF
TA = +25°C, No Load
4.5 V ≤ V+ ≤ 13.2 V
10 µA ≤ IVREF ≤ 500 µA
2.490
2.510
± 0.05
± 0.25
V
%/V
%/mA
OPEN-COLLECTOR OUTPUTS OVER, UNDER
Output Low Voltage
VOL
Output Low Voltage
VOL
Output Leakage Current
IOH
ISINK = 1.6 mA
ISINK = 20 mA
0.4
mV
1.0
V
100
µA
POWER SUPPLY
Supply Range
Supply Current
V+
ISY
Unloaded
4.5
13.2
V
600
µA
NOTES
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
DICE CHARACTERISTICS
Die Size 0.078 × 0.071 inch, 5,538 sq. mils
(1.98 × 1.80 mm, 3.57 sq. mm)
Transistor Count: 105
8
7
6
1
2
3
5
4
4
1. VREF
2. SETHIGH
3. SETLOW
4. GND (TWO PLACES)
(CONNECTED TO SUBSTRATE)
5. VPTAT
6. UNDER
7. OVER
8. V+
For additional DICE ordering information, refer to databook.
–4–
REV. C
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