TN2425 データシートの表示（PDF） - Supertex Inc
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TN2425 Datasheet PDF : 5 Pages
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TN2425
Electrical Characteristics (TA=25°C unless otherwise specified)
Symbol Parameter
Min
Typ
Max
Units Conditions
BVDSS Drain-to-source breakdown voltage
250
-
-
V
VGS = 0V, ID = 250µA
VGS(th)
ΔVGS(th)
Gate threshold voltage
VGS(th) change with temperature
0.8
-
2.0
V
VGS = VDS, ID = 1.0mA
-
-
-5.0 mV/OC VGS = VDS, ID = 1.0mA
IGSS
Gate body leakage current
-
-
100
nA VGS = ±20V, VDS = 0V
IDSS
Zero gate voltage drain current
-
-
10
µA VDS = Max rating, VGS = 0V
-
-
1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
ID(ON) ON-state drain current
0.8
-
-
1.5
-
-
A
VGS = 4.5V, VDS = 25V
VGS = 10V, VDS = 25V
RDS(ON)
Static drain-to-source ON-state
resistance
-
-
6.0
VGS = 3.0V, ID = 150mA
-
-
5.0
Ω
VGS = 4.5V, ID = 250mA
-
-
3.5
VGS = 10V, ID = 500mA
ΔRDS(ON) Change in RDS(ON) with temperature
-
-
1.7
%/OC VGS = 10V, ID = 500mA
GFS
Forward transconductance
500
-
-
mmho VDS = 25V, ID = 250mA
CISS
Input capacitance
-
105 200
COSS Common source output capacitance
-
25 100
pF VGS = 0V, VDS = 25V, f = 1MHz
CRSS Reverse transfer capacitance
-
7
40
td(ON)
tr
td(OFF)
tf
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
-
5
15
-
10
25
-
25
35
-
5
15
VDD = 25V,
ns ID = 500mA,
RGEN = 25Ω
VSD
Diode forward voltage drop
-
-
1.5
V
VGS = 0V, ISD = 500mA
trr
Reverse recovery time
-
300
-
ns VGS = 0V, ISD = 500mA
Notes:
1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Thermal Characteristics
Package I (continuous)† ID (pulsed)
D
TO-243AA
480mA
1.9A
Power Dissipation
@TA = 25OC
1.6W‡
θ
JC
(OC/W)
15
Notes:
† ID (continuous) is limited by max rated TJ.
‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
θ
JA
(OC/W)
78‡
I†
DR
480mA
I
DRM
1.9A
Switching Waveforms and Test Circuit
10V
Input
0V 10%
t (ON)
90%
t (OFF)
td(ON)
tr
td(OFF)
tf
V
DD
Output
10%
10%
0V
90%
90%
2
Pulse
Generator
RGEN
Input
VDD
RL
OUTPUT
D.U.T
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