ZHB6718(1997) データシートの表示（PDF） - Diodes Incorporated.
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ZHB6718 Datasheet PDF : 8 Pages
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ZHB6718
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at Tamb = 25°C*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally
Derate above 25°C*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally
Thermal Resistance - Junction to Ambient*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally
SYMBOL
Ptot
Rth(j-amb)
VALUE
1.25
2
10
16
100
62.5
UNIT
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
100
t1
D=t1
80
tP
tP
60
40
20
D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
0
100us 1ms 10ms 100ms 1s
Pulse Width
10s 100s
Transient Thermal Resistance
Single Transistor "On"
2.0
1.5
1.0
0.5
0
0 20 40 60 80 100 120 140 160
T - Temperature (°C)
Derating curve
60
t1
D=t1
50
tP
40
tP
30
D=1
20
D=0.5
D=0.2
10
D=0.1
D=0.05
0
100us 1ms 10ms 100ms 1s
Pulse Width
Single Pulse
10s 100s
Transient Thermal Resistance
Q1 and Q3 or Q2 and Q4 "On"
10
Two devices on
Full Copper Single device on
1
Two devices on
Minimum Copper
Single device on
0.1
0.1
1
10
Pcb Area (inches squared)
Pd v PCB Area Comparison
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
Two devices on is the standard operating condition for the bridge. Eg opposing NPN/PNP pairs
turned on.
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