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L9700D データシートの表示(PDF) - STMicroelectronics

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L9700D
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L9700D Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
L9700
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCC Supply Voltage
IIN Input Current per Channel
Tj, Tstg Junction and Storage Temperature
Ptot Total Power Dissipation (Tamb = 85°C)
Note: The circuit is ESD protected according to MIL-STD-883C
Value
20
30
–55 to 150
650
Unit
V
mA
°C
mW
THERMAL DATA
Symbol
Parameter
MINIDIP
SO8
Unit
Rth j-amb Thermal Resistance Junction to Ambient
duct(s) PIN CONNECTION
Max.
100
200
°C/W
duct(s) - Obsolete Pro ELECTRICAL CHARACTERISTICS (VCC = 5V, TJ = –40 to 125°C unless otherwise specified)
Pro Symbol
Parameter
VCC Supply Voltage
te ICC Supply Current
le Vcis Static Input Clamping Voltage
ObsoIIN Input Current (static)
Test condition
Negative IIN = –10mA
Positive IIN = +10mA
VIN = 0
VIN = VCC
Min.
4.75
–250
VCC
Typ.
1.5
Max.
5.25
3
0
VCC +250
15
15
Unit
V
mA
mV
µA
µA
VIN = 50mV
5
µA
VIN = VCC –50mV
5
µA
Vcld (*) Dynamic Input Clamping Voltage
IIN = ± 10mA, tR = 5ns
Positive Overshoot
Negative Overshoot
400 mV
400 mV
tS (*) Setting Time
See fig. 2
20
ns
RIN (*) Dynamic Input Resistance
5
(*) Design limits are guaranteed by statistical control on production samples over the indicated temperature and supply voltage
ranges. These limits are not used to calculate outgoing quality levels.
2/8

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