M2S56D20AKT データシートの表示（PDF） - Elpida Memory, Inc

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M2S56D20AKT

256M Double Data Rate Synchronous DRAM

Elpida Memory, Inc 

DDR SDRAM

E0338M10 (Ver.1.0)

(Previous Rev.1.54E)

Jan. '03 CP(K)

M2S56D20/ 30/ 40ATP

M2S56D20/ 30/ 40AKT

256M Double Data Rate Synchronous DRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDD

Supply Voltage

VDDQ

Supply Voltage for Output

VI

Input Voltage

VO

Output Voltage

IO

Output Current

Pd

Power Dissipation

Topr

Operating Temperature

Tstg

Storage Temperature

Conditions

with respect to VSS

with respect to VSSQ

with respect to VSS

with respect to VSSQ

TA = 25 oC

Ratings

Unit

-0.5 to 3.7

V

-0.5 to 3.7

V

-0.5 to VDD+0.5

V

-0.5 to VDDQ+0.5 V

50

mA

1000

mW

0 to 70

oC

-65 to 150

oC

DC OPERATING CONDITIONS

(TA=0 to 70oC, unless otherwise noted)

Symbol

Parameter

Limits

Unit Notes

Min.

Typ.

Max.

VDD

Supply Voltage

2.3

2.5

2.7

V

VDDQ

Supply Voltage for Output

2.3

2.5

2.7

V

VREF

Input Reference Voltage

0.49*VDDQ 0.50*VDDQ 0.51*VDDQ V 5

VIH(DC)

High-Level Input Voltage

VREF + 0.15

VDDQ+0.3 V

VIL(DC)

Low-Level Input Voltage

-0.3

VREF - 0.15 V

VIN(DC) Input Voltage Level, CLK and /CLK

-0.3

VDDQ + 0.3 V

VID(DC) Input Differential Voltage, CLK and /CLK 0.36

VDDQ + 0.6 V 7

VTT

I/O Termination Voltage

VREF - 0.04

VREF + 0.04 V 6

AC OVERSHOOT/UNDERSHOOT SPECIFICATION

Parameter

Maximum peak amplitude allowed for overshoot

Maximum peak amplitude allowed for undershoot

The area between the overshoot signal and VDD must be less than or euqal to

The area between the undershoot signal and VSS must be less than or euqal to

Specification

1.6V

1.6V

4.5 V-ns

4.5 V-ns

5

4

3

2

1

VSS(0)

-1

-2

-3

Overshoot

Undershoot

Maximum Amplitude

Area (max.4.5V-ns)

Maximum Amplitude

VDD

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 Time (ns)

5.625

18

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