M36W432BG-ZAT データシートの表示（PDF） - STMicroelectronics
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M36W432BG-ZAT
STMicroelectronics
M36W432BG-ZAT Datasheet PDF : 66 Pages
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M36W432TG, M36W432BG
Table 6. DC Characteristics
Symbol
Parameter
Device
Test Condition
Min
ILI Input Leakage Current
Flash &
SRAM
0V ≤ VIN ≤ VDDQF
ILO Output Leakage Current
Flash
SRAM
0V ≤ VOUT ≤ VDDQF
0V ≤ VOUT ≤ VDDQF,
SRAM Outputs Hi-Z
Flash
EF = VDDQF ± 0.2V
RPF = VDDQF ± 0.2V
IDDS VDD Standby Current
SRAM
E1S ≥ VDDS – 0.2V
VIN ≥ VDDS – 0.2V or VIN ≤ 0.2V
f = fmax (A0-A17 and DQ0-
DQ15 only)
f = 0 (GS, WS, UBS and LBS)
E1S ≥ VDDS – 0.2V
VIN ≥ VDDS – 0.2V or VIN ≤ 0.2V,
f=0
IDDD Supply Current (Reset)
Flash
RPF = VSSF ± 0.2V
IDD Supply Current
SRAM
f = fmax = 1/AVAV,
VIN ≤ 0.2V, IOUT = 0 mA
f = 1MHz,
VIN ≤ 0.2V, IOUT = 0 mA
IDDR Supply Current (Read)
Flash
EF = VIL, GF = VIH, f = 5MHz
IDDW Supply Current (Program) Flash
Program in progress
VPPF = 12V ± 5%
Program in progress
VPPF = VDDF
IDDE Supply Current (Erase)
Flash
Erase in progress
VPPF = 12V ± 5%
Erase in progress
VPPF = VDDF
IDDWES
Supply Current
(Program/Erase Suspend)
Flash
EF = VDDQF ± 0.2V,
Erase suspended
IPPS
Program Current
(Read or Standby)
Flash
VPPF ≤ VDDF
VPPF > VDDF
IPPR Program Current (Reset) Flash
RPF = VSSF ± 0.2V
IPPW
Program Current
(Program)
Flash
Program in progress
VPPF = 12V ± 5%
Program in progress
VPPF = VDDF
IPPE Program Current (Erase) Flash
Erase in progress
VPPF = 12V ± 5%
Erase in progress
VPPF = VDDF
Typ Max Unit
±1 µA
±10 µA
±1 µA
15
50 µA
7
15 µA
7
15 µA
15
50 µA
5.5
12 mA
1.5
3 mA
9
18 mA
5
10 mA
10
20 mA
5
20 mA
10
20 mA
15
50 µA
1
5
µA
400 µA
1
5
µA
1
10 mA
1
5
µA
3
10 mA
1
5
µA
14/66
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