M36W432BG70ZA1 データシートの表示（PDF） - STMicroelectronics

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M36W432BG70ZA1

32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36W432TG, M36W432BG

Table 15. Flash Program, Erase Times and Program/Erase Endurance Cycles

Parameter

Test Conditions

Flash Device

Min

Typ

Max

Unit

Word Program

VPPF = VDDF

10

200

µs

Double Word Program

VPPF = 12V ±5%

10

200

µs

Quadruple Word Program

VPPF = 12V ±5%

10

200

µs

Main Block Program

VPPF = 12V ±5%

VPPF = VDDF

0.16/0.08 (1)

5

s

0.32

5

s

Parameter Block Program

VPPF = 12V ±5%

VPPF = VDDF

0.02/0.01 (1)

4

s

0.04

4

s

Main Block Erase

VPPF = 12V ±5%

VPPF = VDDVDDF

1

10

s

1

10

s

Parameter Block Erase

VPPF = 12V ±5%

VPPF = VDDF

0.4

10

s

0.4

10

s

Program/Erase Cycles (per Block)

100,000

cycles

Note: 1. Typical time to program a Main or Parameter Block using the Double Word Program and the Quadruple Word Program commands

respectively.

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