M36W432BG70ZA6 データシートの表示（PDF） - STMicroelectronics

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M36W432BG70ZA6

32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36W432TG, M36W432BG

Table 30. CFI Query System Interface Information

Offset

Data

Description

VDDF Logic Supply Minimum Program/Erase or Write voltage

1Bh

0027h

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 mV

VDDF Logic Supply Maximum Program/Erase or Write voltage

1Ch

0036h

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 mV

VPPF [Programming] Supply Minimum Program/Erase voltage

1Dh

00B4h

bit 7 to 4

HEX value in volts

bit 3 to 0

BCD value in 100 mV

VPPF [Programming] Supply Maximum Program/Erase voltage

1Eh

00C6h

bit 7 to 4

HEX value in volts

bit 3 to 0

BCD value in 100 mV

1Fh

0004h Typical time-out per single word program = 2n µs

20h

0004h Typical time-out for Double/ Quadruple Word Program = 2n µs

21h

000Ah Typical time-out per individual block erase = 2n ms

22h

0000h Typical time-out for full chip erase = 2n ms

23h

0005h Maximum time-out for word program = 2n times typical

24h

0005h Maximum time-out for Double/ Quadruple Word Program = 2n times typical

25h

0003h Maximum time-out per individual block erase = 2n times typical

26h

0000h Maximum time-out for chip erase = 2n times typical

Value

2.7V

3.6V

11.4V

12.6V

16µs

16µs

1s

NA

512µs

512µs

8s

NA

51/66

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