M36DR432AZA データシートの表示（PDF） - STMicroelectronics
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M36DR432AZA
STMicroelectronics
M36DR432AZA Datasheet PDF : 46 Pages
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M36DR432A, M36DR432B
Table 24. DC Characteristics
(TA = –40 to 85°C; VDDF = VDDS = 1.65V to 2.2V)
Symbol Parameter
Device
Test Condition
Min Typ Max Unit
ILI
Input Leakage
Current
Flash &
SRAM
0V ≤ VIN ≤ VDD
±2
µA
ILO
Output Leakage
Current
Flash &
SRAM
0V ≤ VOUT ≤ VDD
±10 µA
IDDS
VDD Standby
Current
IDDD
Supply Current
(Reset)
Flash
SRAM
Flash
EF = VDDF ± 0.2V
VDDF = VDD max
E1S ≥ VDDS – 0.2V, E2S ≤ VDDS – 0.2V,
VIN ≥ VDDS – 0.2V
or VIN ≤ VDDS – 0.2V, f=0
RPF = VSSF ± 0.2V
15
50
µA
20
50
µA
2
10
µA
IDD Supply Current
SRAM
IIO = 0 mA, E1S = VIL, E2S = WS = VIH,
VIN = VIL or VIH, VDDS = VDD max,
cycle time = 1µs
IIO = 0 mA, E1S = VIL, E2S = WS = VIH,
VIN = VIL or VIH, VDDS = VDD max,
min cycle time
10 mA
25 mA
IDDR
Supply Current
(Read)
Flash
EF = VIL, GF = VIH, f = 5 MHz
10
20 mA
IDDW
Supply Current
(Program)
Flash
Program in progress
10
20 mA
IDDWD
Supply Current
(Dual Bank)
Flash
Program/Erase in progress in one bank
Read in the other bank
20
40 mA
IDDE
Supply Current
(Erase)
Flash
Erase in progress
10
20 mA
IDDES(1)
Supply Current
(Erase Suspend)
Flash
Erase Suspend in progress
50
µA
Supply Current
IDDWS(1) (Program
Suspend)
Flash
Program Suspend in progress
50
µA
IPPS
Program Current
(Standby)
IPPR
Program Current
(Read)
Flash
Flash
VPPF ≤ VDDS
VPPF = 12V ± 0.6V
VPPF ≤ VDDS
VPPF = 12V ± 0.6V
0.2
5
µA
100 400 µA
0.2
5
µA
100 400 µA
IPPW
Program Current
(Program)
Flash
VPPF = 12V ± 0.6V
Program in progress
5
10 mA
IPPE
Program Current
(Erase)
Flash
VPPF = 12V ± 0.6V
Program in progress
5
10 mA
VIL
Input Low Voltage
Flash &
SRAM
–0.5
0.4
V
VIH
Input High
Voltage
Flash &
SRAM
1.4
VDD +0.3 V
VOL
Output Low
Voltage
VOH
Output High
Voltage
Flash &
SRAM
Flash &
SRAM
VDDF = VDDS = VDD min
IOL = 100µA
VDDF = VDDS = VDD min
IOH = –100µA
VDD –0.1
0.2
V
V
24/46
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