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NT2H0301F0DTL,125 データシートの表示(PDF) - NXP Semiconductors.

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NT2H0301F0DTL,125 Datasheet PDF : 31 Pages
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NXP Semiconductors
NTAG203F
NFC Forum compliant IC with user memory and field detection
7.9.7 WRITE
Table 15. WRITE
Code Parameter/ARG
A2h ADR: ‘02h’ to ‘29h’
Data Integrity mechanism Response
4 Byte Parity, CRC
ACK or NAK
Description: The WRITE command is used to program the lock bytes in page 02h, the
CC bytes in page 03h or the data bytes in pages 04h to 05h. A WRITE command is
performed page-wise, programming 4 bytes in a page.
RWD
command
CMD ARG
4 byte data
A2 ADR D0 D1 D2 D3
CRC
C0 C1
NTAG
response
690 µs
90 µs
Remark: Time units are not to scale and rounded off to 10 s
Fig 17. WRITE
NAK
50 µs
4110 µs
time
AK
50 µs
aaa-001151
NTAG203F
Product data sheet
COMPANY PUBLIC
All information provided in this document is subject to legal disclaimers.
Rev. 3.5 — 28 September 2015
220635
© NXP Semiconductors N.V. 2015. All rights reserved.
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