DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IDT71V321L データシートの表示(PDF) - Integrated Device Technology

部品番号
コンポーネント説明
メーカー
IDT71V321L
IDT
Integrated Device Technology IDT
IDT71V321L Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IDT71V321S/L
High Speed 3.3V 2K x 8 Dual-Port Static RAM with Interrupts
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(1,2) (VCC = 3.3V ± 0.3V)
71V321X25
Com'l & Ind
71V321X35
Com'l & Ind
71V321X55
Com'l & Ind
Symbol
Parameter
Test Condition
Version Typ. Max. Typ. Max. Typ. Max. Unit
ICC Dynamic Operating
Current
(Both Ports Active)
CE = VIL, Outputs Disabled
SEM = VIH
f = fMAX(3)
COM'L S 55 130 55 125 55 115 mA
L 55 100 55 95 55 85
IND
L 55 130 55 125 55 115
ISB1 Standby Current
(Both Ports - TTL
Level Inputs)
CER = CEL = VIH
SEMR = SEML = VIH
f = fMAX(3)
COM'L S 15 35 15 35 15 35 mA
L 15 20 15 20 15 20
IND
L 15 35 15 35 15 35
ISB2 Standby Current
(One Port - TTL
Level Inputs)
CE"A" = VIL and CE"B" = VIH(5)
Active Port Outputs Disabled,
f=fMAX(3)
SEMR = SEML = VIH
COM'L S 25 75 25 70 25 60 mA
L 25 55 25 50 25 40
IND
L 25 75 25 70 25 60
ISB3 Full Standby Current Both Ports CEL and
(Both Ports - All
CER > VCC - 0.2V
CMOS Level Inputs) VIN > VCC - 0.2V or
VIN < 0.2V, f = 0(4)
SEMR = SEML > VCC - 0.2V
COM'L S 1.0
5
1.0
5
1.0
5 mA
L 0.2
3
0.2
3
0.2
3
IND
L 0.2
6
1.0
5
1.0
5
ISB4 Full Standby Current CE"A" < 0.2V and
(One Port - All
CE"B" > VCC - 0.2V(5)
CMOS Level Inputs) SEMR = SEML > VCC - 0.2V
VIN > VCC - 0.2V or VIN < 0.2V
Active Port Outputs Disabled
f = fMAX(3)
COM'L S 25 70 25 65 25 55 mA
L 25 55 25 50 25 40
IND
L 25 70 25 65 25 55
3026 tbl 06
NOTES:
1. 'X' in part numbers indicates power rating (S or L).
2. VCC = 3.3V, TA = +25°C, and are not production tested. ICCDC = 70mA (Typ.).
3. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC and using "AC Test Conditions" of input levels
of GND to 3V.
4. f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby.
5. Port "A" may be either left or right port. Port "B" is opposite from port "A".
Data Retention Characteristics (L Version Only)
Symbol
Parameter
Test Condition
VDR
VCC for Data Retention
ICCDR
Data Retention Current
VCC = 2V, CE > VCC - 0.2V
COM'L.
tCDR(3)
Chip Deselect to Data
Retention Time
VIN > VCC - 0.2V or VIN < 0.2V
IND.
tR(3)
Operation Recovery Time
NOTES:
1. VCC = 2V, TA = +25°C, and is not production tested.
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization but not production tested.
Min.
2.0
___
___
0
tRC(2)
Typ. (1)
___
100
100
___
___
Max.
0
500
1000
___
___
Unit
V
µA
µA
V
V
3026 tbl 07
6.442

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]