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IDT71V321L データシートの表示(PDF) - Integrated Device Technology

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IDT71V321L
IDT
Integrated Device Technology IDT
IDT71V321L Datasheet PDF : 15 Pages
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IDT71V321S/L
High Speed 3.3V 2K x 8 Dual-Port Static RAM with Interrupts
Industrial and Commercial Temperature Ranges
Timing Waveform of Read Cycle No. 1, Either Side(1)
tRC
ADDRESS
DATAOUT
BUSYOUT
tAA
tOH
PREVIOUS DATA VALID
tOH
DATA VALID
tBDD (2,3)
3026 drw 06
NOTES:
1. R/W = VIH, CE = VIL, and is OE = VIL. Address is valid prior to the coincidental with CE transition LOW.
2. tBDD delay is required only in the case where the opposite port is completing a write operation to the same address location. For simultaneous read operations
BUSY has no relationship to valid output data.
3. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD.
Timing Waveform of Read Cycle No. 2, Either Side (3)
CE
OE
DATAOUT
ICC
CURRENT
ISS
tACE
tAOE (4)
tLZ (1)
tLZ (1)
tPU
50%
tHZ (2)
tHZ(2)
VALID DATA
tPD (4)
50%
NOTES:
1. Timing depends on which signal is asserted last, OE or CE.
2. Timing depends on which signal is de-asserted first, OE or CE.
3. R/W = VIH and the address is valid prior to or coincidental with CE transition LOW.
4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD.
3026 drw 07
6.642

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