IDT71V321L データシートの表示（PDF） - Integrated Device Technology
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IDT71V321L Datasheet PDF : 15 Pages
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IDT71V321S/L
High Speed 3.3V 2K x 8 Dual-Port Static RAM with Interrupts
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(4)
71V321X25
Com'l & Ind
71V321X35
Com'l & Ind
71V321X55
Com'l & Ind
Symbol
Parameter
Min. Max. Min. Max. Min. Max. Unit
WRITE CYCLE
tWC
Write Cycle Time
25
____
35
____
55
____
ns
tEW
Chip Enable to End-of-Write
20
____
30
____
40
____
ns
tAW
Address Valid to End-of-Write
20
____
30
____
40
____
ns
tAS
Address Set-up Time
0
____
0
____
0
____
ns
tWP
Write Pulse Width
20
____
30
____
40
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tDW
Data Valid to End-of-Write
tHZ
Output High-Z Time(1,2)
tDH
Data Hold Time(3)
tWZ
Write Enable to Output in High-Z(1,2)
tOW
Output Active from End-of-Write(1,2)
12
____
20
____
20
____
ns
____
12
____
15
____
30
ns
0
____
0
____
0
____
ns
____
15
____
15
____
30
ns
0
____
0
____
0
____
ns
NOTES:
3026 tbl 10
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but is not production tested.
3. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over
voltage and temperature, the actual tDH will always be smaller than the actual tOW.
4. 'X'inpartnumbersindicatespowerrating(SorL).
6.742
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