BD3502FVM-TR(2008) データシートの表示（PDF） - ROHM Semiconductor
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BD3502FVM-TR
(Rev.:2008)
(Rev.:2008)
ROHM Semiconductor
BD3502FVM-TR Datasheet PDF : 17 Pages
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●NOTE FOR USE
1.Absolute maximum ratings
For the present product, thoroughgoing quality control is carried out, but in the event that applied voltage, working temperature range, and
other absolute maximum rating are exceeded, the present product may be destroyed. Because it is unable to identify the short mode,
open mode, etc., if any special mode is assumed, which exceeds the absolute maximum rating, physical safety measures are requested to
be taken, such as fuses, etc.
2.GND potential
Bring the GND terminal potential to the minimum potential in any operating condition.
3.Thermal design
Consider allowable loss (Pd) under actual working condition and carry out thermal design with sufficient margin provided.
4.Terminal-to-terminal short-circuit and erroneous mounting
When the present IC is mounted to a printed circuit board, take utmost care to direction of IC and displacement. In the event that the IC is
mounted erroneously, IC may be destroyed. In the event of short-circuit caused by foreign matter that enters in a clearance between
outputs or output and power-GND, the IC may be destroyed.
5.Operation in strong electromagnetic field
The use of the present IC in the strong electromagnetic field may result in maloperation, to which care must be taken.
6.Built-in thermal shutdown protection circuit
The present IC incorporates a thermal shutdown protection circuit (TSD circuit). The working temperature is 175°C (standard value) and
has a -15°C (standard value) hysteresis width. When the IC chip temperature rises and the TSD circuit operates, the output terminal is
brought to the OFF state. The built-in thermal shutdown protection circuit (TSD circuit) is first and foremost intended for interrupt IC from
thermal runaway, and is not intended to protect and warrant the IC. Consequently, never attempt to continuously use the IC after this
circuit is activated or to use the circuit with the activation of the circuit premised.
7.Capacitor across output and GND
In the event a large capacitor is connected across output and GND, when Vcc and VIN are short-circuited with 0V or GND for some kind of
reasons, current charged in the capacitor flows into the output and may destroy the IC. Use a capacitor smaller than 1000 μF between
output and GND.
8.Inspection by set substrate
In the event a capacitor is connected to a pin with low impedance at the time of inspection with a set substrate, there is a fear of applying
stress to the IC. Therefore, be sure to discharge electricity for every process. As electrostatic measures, provide grounding in the
assembly process, and take utmost care in transportation and storage. Furthermore, when the set substrate is connected to a jig in the
inspection process, be sure to turn OFF power supply to connect the jig and be sure to turn OFF power supply to remove the jig.
9.IC terminal input
The present IC is a monolithic IC and has a P substrate and P+ isolation between elements.
With this P layer and N layer of each element, PN junction is formed, and when the potential relation is
GND>terminal A>terminal B, PN junction works as a diode, and
terminal B>GND terminal A, PN junction operates as a parasitic transistor.
The parasitic element is inevitably formed because of the IC construction. The operation of the parasitic element gives rise to mutual
interference between circuits and results in malfunction, and eventually, breakdown. Consequently, take utmost care not to use the IC to
operate the parasitic element such as applying voltage lower than GND (P substrate) to the input terminal.
(PIN A)
Resistor
(PIN B)
NPN Transistor Structure (NPN)
B
C
E
(PIN A)
Parasitic diode
P+
N
P
N
P+
N
P substrate Parasitic diode
GND
P+
N
N
P
N
P substrate
Parasitic diode
GND
GND
P+
N
GND
(PIN B)
B
Nearby other device
C
E
GND
Parasitic diode
13/16
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