M58CR064PZB データシートの表示（PDF） - STMicroelectronics
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M58CR064PZB Datasheet PDF : 70 Pages
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M58CR064C, M58CR064D, M58CR064P, M58CR064Q
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
ble 14. In the M58CR064 the maximum number of
Program/ Erase cycles depends on the voltage
supply used.
Table 14. Program, Erase Times and Program, Erase Endurance Cycles
Parameter
Condition
Typical
Min
Typ
after
100k W/E
Cycles
Parameter Block (4 KWord) Erase(2)
0.3
1
Main Block (32 KWord) Erase
Preprogrammed
Not Preprogrammed
0.8
3
1.1
Preprogrammed
11
Bank A (16Mbit) Erase
Not Preprogrammed
18
Preprogrammed
33
Bank B (48Mbit) Erase
Not Preprogrammed
54
Parameter Block (4 KWord) Program(3)
40
Main Block (32 KWord) Program(3)
300
Word Program (3)
10
10
Program Suspend Latency
Erase Suspend Latency
Program/Erase Cycles (per Block)
Main Blocks
Parameter Blocks
5
5
100,000
100,000
Parameter Block (4 KWord) Erase
0.3
Main Block (32 KWord) Erase
0.9
Bank A (16Mbit) Erase
13
Bank B (48Mbit) Erase
39
4Mbit Program
Quadruple Word
510
Word/ Double Word/ Quadruple Word Program(3)
8
Parameter Block (4 KWord)
Quadruple Word
8
Program(3)
Word
32
Quadruple Word
64
Main Block (32 KWord) Program(3)
Word
256
Main Blocks
Program/Erase Cycles (per Block)
Parameter Blocks
Note: 1. TA = –40 to 85°C; VDD = 1.65V to 2V; VDDQ = 1.65V to 3.3V.
2. The difference between Preprogrammed and not preprogrammed is not significant (‹30ms).
3. Excludes the time needed to execute the command sequence.
Max Unit
2.5
s
4
s
4
s
s
s
s
s
ms
ms
100 µs
10
µs
20
µs
cycles
cycles
2.5
s
4
s
s
s
ms
100 µs
ms
ms
ms
ms
1000 cycles
2500 cycles
30/70
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