M58CR064P データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

M58CR064P

64 Mbit (4Mb x 16, Dual Bank, Burst) 1.8V Supply Flash Memory

STMicroelectronics 

M58CR064C, M58CR064D, M58CR064P, M58CR064Q

Date

24-Feb-2003

06-Jun-2003

Version

9.2

9.3

Revision Details

Revision History moved to end of document.

90ns Speed Class added. Bank Erase Command moved to Factory Program

Commands section. Bank Erase cycles limited to 100 per Block.

WAIT signal modified in Figure 7, Wait Configuration Example. WAIT behavior

modified. Burst sequence in wrapped configuration and Burst sequence start

specified in Synchronous Burst Read Mode paragraph. Erase replaced by Block

Erase in Tables 11 and 12, Dual Operations allowed in Other Bank and in Same

Bank, respectively. Latch signal corrected in Figure 11, Asynchronous Page Read

AC Waveforms. Daisy Chain added.

VDD and VDDQ minimum values changed for 90ns speed class in Table 16, Operating

and AC Measurement Conditions. Minor text changes.

69/70

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