M29F800AB データシートの表示（PDF） - STMicroelectronics

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M29F800AB

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Single Supply Flash Memory

STMicroelectronics 

M29F800AT, M29F800AB

Table 13. DC Characteristics

(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)

Symbol

Parameter

Test Condition

Min

ILI Input Leakage Current

ILO Output Leakage Current

0V ≤ VIN ≤ VCC

0V ≤ VOUT ≤ VCC

ICC1 Supply Current (Read)

E = VIL, G = VIH, f = 6MHz

ICC2 Supply Current (Standby) TTL

E = VIH

ICC3 Supply Current (Standby) CMOS

E = VCC ±0.2V,

RP = VCC ±0.2V

ICC4 (1) Supply Current (Program/Erase)

Program/Erase

Controller active

VIL Input Low Voltage

–0.5

VIH Input High Voltage

VOL Output Low Voltage

Output High Voltage TTL

VOH

Output High Voltage CMOS

VID Identification Voltage

IID Identification Current

IOL = 5.8mA

IOH = –2.5mA

IOH = –100µA

A9 = VID

2

2.4

VCC –0.4

11.5

VLKO (1)

Program/Erase Lockout Supply

Voltage

3.2

Note: 1. Sampled only, not 100% tested.

2. TA = 25 °C, VCC = 5V.

Typ. (2)

10

35

Max

±1

±1

20

1

150

Unit

µA

µA

mA

mA

µA

20

mA

0.8

V

VCC +0.5 V

0.45

V

V

V

12.5

V

100

µA

4.2

V

13/22

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