BCW68G(2011) データシートの表示（PDF） - Micro Commercial Components

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BCW68G
(Rev.:2011)

PNP Small Signal Transistor 330mW

Micro Commercial Components 

BCW68G

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol

DC Current Gain(1)

at VCE = 10V, IC = 100µA

at VCE = 1V, IC = 10mA

at VCE = 1V, IC = 100mA

at VCE = 2V, IC = 500mA

Collector-Emitter Saturation Voltage(1)

at IC = 100mA, IB = 10mA

at IC = 500mA, IB = 50mA

Base-Emitter Saturation Voltage(1)

at IC = 100mA, IB = 10mA

at IC = 500mA, IB = 50mA

hFE

hFE

hFE

hFE

VCEsat

VCEsat

VBEsat

VBEsat

Collector-Emitter Breakdown Voltage

at IC = 10mA, IB = 0

V(BR)CEO

Collector-Base Breakdown Voltage

at IC = 10µA, IB = 0

V(BR)CBO

Emitter-Base Breakdown Voltage

at IE = 10µA, at IC = 0

V(BR)EBO

Collector-Base Cut-off Current

at VCB = 45V, IE = 0

at VCB = 45V, IE = 0, TA = 150°C

ICBO

ICBO

Emitter-Base Cut-off Current

at VEB = 4V, IC = 0

IEBO

Gain-Bandwidth Product

at VCE = 5V, IC = 50mA, f = 20MHZ

fT

Collector-Base Capacitance

at VCB = 10V, f = 1MHz

CCB

Emitter-Base Capacitance

at VEB = 0.5V, f = 1MHz

CEB

Note: (1) Pulse test: t ≤ 300µs, D = 2%

Min.

50

120

160

60

–

–

–

–

45

60

5

–

–

–

–

–

–

MCC

TM

Micro Commercial Components

TYP.

–

–

250

–

–

–

–

–

–

–

–

–

–

–

200

6

60

Max.

–

–

400

–

0.3

0.7

1.25

2

–

–

–

20

20

20

–

–

–

Unit

–

–

–

–

V

V

V

V

V

V

V

nA

µA

nA

MHz

pF

pF

Revision: A

www.mccsemi.com

2 of 3

2011/01/01

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