STU10N60M2 データシートの表示（PDF） - STMicroelectronics
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STU10N60M2 Datasheet PDF : 24 Pages
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Electrical characteristics
STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On /off states
Test conditions
Drain-source
V(BR)DSS breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 600 V
drain current (VGS = 0) VDS = 600 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 μA
Static drain-source
on-resistance
VGS = 10 V, ID = 3 A
Min. Typ. Max. Unit
600
V
1 μA
100 μA
±10 μA
2
3
4V
0.550 0.600 Ω
Symbol
Parameter
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
- 400 - pF
-
22
- pF
- 0.84 - pF
(1) Equivalent output
Coss eq. capacitance
VDS = 0 to 480 V, VGS = 0
-
83
- pF
Intrinsic gate
RG resistance
f = 1 MHz open drain
-
6.4
-
Ω
Qg Total gate charge
VDD = 480 V, ID = 7.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 17)
- 13.5 - nC
-
2.1
- nC
-
7.2
- nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Symbol
Parameter
Table 7. Switching times
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 3.75 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16 and
Figure 21)
Min. Typ. Max. Unit
- 8.8 - ns
-
8
- ns
- 32.5 - ns
- 13.2 - ns
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DocID024710 Rev 2
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