FGP10N60UNDF(2012) データシートの表示（PDF） - Fairchild Semiconductor
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FGP10N60UNDF Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
4
IC = 5A
10A
20A
0
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
15
12
200V
VCC = 100V
400V
9
6
3
Common Emitter
TC = 25oC
0
0 5 10 15 20 25 30 35 40 45 50
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
50
10
tr
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 10A
TC = 25oC
TC = 125oC
1
0
10 20 30 40 50 60
Gate Resistance, RG [Ω]
Figure 8. Capacitance Characteristics
3000
1000
100
Cies
Coes
Cres
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
10
1
10
30
Collector-Emitter Voltage, VCE [V]
Figure 10. SOA Characteristics
100
10µs
10
100µs
1ms
1
10 ms
0.1
0.01
1
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
10
DC
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 10A
TC = 25oC
TC = 125oC
td(off)
100
tf
10
0
10 20 30 40 50 60
Gate Resistance, RG [Ω]
FGP10N60UNDF Rev.A
5
www.fairchildsemi.com
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