NTE907 データシートの表示（PDF） - NTE Electronics
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NTE907 Datasheet PDF : 3 Pages
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Electrical Characteristics: (TA = +25°C, Note 1 unless otherwise specified)
Parameter
Symbol Test Conditions Min Typ Max Unit
DC Forward Voltage Drop
DC Reverse Breakdown Voltage
DC Reverse Breakdown Voltage
Between any Diode Unit and
Substrate
VF
V(BR)R
V(BR)R
IF = 50µA
IF =1 mA
IF = 3mA
IF = 10mA
IR = –10µA
IR = –10µA
– 0.65 0.69 V
– 0.73 0.78
– 0.76 0.80
– 0.81 0.90
5
7
–
V
20 –
–
V
DC Reverse (Leakage) Current
DC Reverse (Leakage) Current
Between any Diode Unit and
Substrate
IR
VR = –4V
IR
VR = –10V
– 0.016 100 nA
– 0.022 100 nA
Magnitude of Diode Offset Voltage
|VF1–VF2| IF = 1mA
(Difference in DC Forward Voltage
Drops of any Two Diode Units)
– 0.5 5 mV
Temperature Coefficient of |VF1–VF2|
Temperature Coefficient of Forward
Drop
∆|VF1–VF2| IF = 1mA
∆T
∆VF IF = 1mA
∆T
–
1
– µV/°C
– –1.9 – mV/°C
DC Forward Voltage Drop for
Anode–to–Substrate Diode (DS)
Reverse Recovery Time
Diode Resistance
Diode Capacitance
Diode–to–Substrate Capacitance
VF
IF = 1mA
– 0.65 –
V
trr
IF = 10mA, IR = 10mA –
1
–
ns
RD
f = 1kHz, IF = 1mA
25 30 45
Ω
CD
VR = –2V, IF = 0
– 0.65 –
pF
CD1
VD1 = +4V, IF = 0
– 3.2 –
pF
Note 1. Characteristics apply for each diode unit, unless otherwise specified.
Pin Connection Diagram
(Top View)
Anode D1
8
Anode D6 9
Cathode D6/
Substrate & Case 10
67 Cathode D1
6 Cathode D2
Cathode D5 11
5 Anode D2
Anode D5 12
Anode D4 1
4 Anode D3
12
3 Cathode D3
Cathode D4
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