FDPF33N25T
N-Channel UniFETTM MOSFET
250 V, 33 A, 94 m
Features
• RDS(on) = 94 m (Max.) @ VGS = 10 V, ID = 16.5 A
• Low Gate Charge (Typ.36.8 nC)
• Low Crss (Typ. 39 pF)
• Improved dv/dt Capability
Applications
• PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
March 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
GDS
TO-220F
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25C)
- Continuous (TC = 100C)
- Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD
Power Dissipation (TC = 25C)
- Derate above 25C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
©2007 Fairchild Semiconductor Corporation
1
FDPF33N25T Rev. C0
S
FDPF33N25T
250
33*
20.4*
132*
30
918
33
23.5
4.5
37
0.29
-55 to +150
300
FDPF33N25T
3.4
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/C
C
C
Unit
C/W
C/W
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