MCRF200
TABLE 5-3: DIE MECHANICAL DIMENSIONS
Specifications
Min
Typ
Max Unit
Comments
Bond pad opening
—
3.5 x 3.5
—
mil Note 1, Note 2
—
89 x 89
—
µm
Die backgrind thickness
—
7
—
mil Sawed 6” wafer on frame
—
177.8
—
µm (option = WF) Note 3
—
11
—
mil Unsawed wafer
—
279.4
—
µm (option = W) Note 3
Die backgrind thickness tolerance
—
—
±1
mil
—
—
±25.4 µm
Die passivation thickness (multilayer)
—
0.9050
—
µm Note 4
Die Size:
Die size X*Y before saw (step size)
Die size X*Y after saw
— 44.15 x 68.44 —
— 42.58 x 66.87 —
mil —
mil —
Note 1: The bond pad size is that of the passivation opening. The metal overlaps the bond pad passivation by at
least 0.1 mil.
2: Metal Pad Composition is 98.5% Aluminum with 1% Si and 0.5% Cu.
3: As the die thickness decreases, susceptibility to cracking increases. It is recommended that the die be as
thick as the application will allow.
4: The Die Passivation thickness (0.905 µm) can vary by device depending on the mask set used. The
passivation is formed by:
-Layer 1: Oxide (undoped oxide 0.135 µm)
-Layer 2: PSG (doped oxide, 0.43 µm)
-Layer 3: Oxynitride (top layer, 0.34 µm)
5: The conversion rate is 25.4 µm/mil.
Notice: Extreme care is urged in the handling and assembly of die products since they are susceptible to
mechanical and electrostatic damage.
TABLE 5-4: WAFER MECHANICAL SPECIFICATIONS
Specifications
Min
Typ
Max
Wafer Diameter
Die separation line width
Dice per wafer
Batch size
—
8
—
—
80
—
—
14,000
—
—
24
—
Unit
Comments
inch
µm
die
wafer
150 mm
DS21219H-page 12
2003 Microchip Technology Inc.