Characteristics
STPS40SM120C
Figure 6.
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
1.E+02 IR(mA)
1.E+01
Tj=150°C
Tj=125°C
Figure 7.
C(pF)
10000
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
F=1MHz
Vosc =30mVRMS
Tj=25°C
1.E+00
1.E-01
Tj=100°C
Tj=75°C
Tj=50°C
1000
1.E-02
Tj=25°C
1.E-03
VR(V)
0 10 20 30 40 50 60 70 80 90 100 110 120
100
1
VR(V)
10
100
1000
Figure 8. Forward voltage drop versus
forward current (per diode)
Figure 9. Reverse safe operating area
(tp < 10 µs and Tj < 125 °C)
1000.0 IFM(A)
10.0 Iarm (A)
100.0
Tj=125°C
(Maximum values)
9.5
9.0
10.0
Tj=125°C
(Typical values)
Tj=25°C
(Maximum values)
8.5
8.0
7.5
1.0
0.1
VFM(V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
7.0
6.5
120
130
140
Varm (V)
150
160
170
4/9
Doc ID 022917 Rev 1