W25Q40BW データシートの表示（PDF） - Winbond
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W25Q40BW Datasheet PDF : 70 Pages
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W25Q40BW
9.7 AC Electrical Characteristics (cont’d)
DESCRIPTION
SYMBOL
ALT
MIN
SPEC
TYP
MAX
UNIT
/HOLD Active Hold Time relative to CLK
tCHHH
5
ns
/HOLD Not Active Setup Time relative to CLK
tHHCH
5
ns
/HOLD Not Active Hold Time relative to CLK
/HOLD to Output Low-Z
/HOLD to Output High-Z
Write Protect Setup Time Before /CS Low
Write Protect Hold Time After /CS High
/CS High to Power-down Mode
/CS High to Standby Mode without Electronic
Signature Read
/CS High to Standby Mode with Electronic Signature
Read
/CS High to next Instruction after Suspend
tCHHL
tHHQX(2)
tHLQZ(2)
tWHSL(3)
tSHWL(3)
tDP(2)
tRES1(2)
tRES2(2)
tSUS(2)
5
tLZ
tHZ
20
100
ns
7
ns
12
ns
ns
ns
3
µs
30
µs
30
µs
20
µs
Write Status Register Time
tW
Byte Program Time (First Byte) (4)
tBP1
Additional Byte Program Time (After First Byte) (4)
tBP2
Page Program Time
tPP
Sector Erase Time (4KB)
tSE
10
15
ms
20
50
µs
2.5
10
µs
0.4
0.8
ms
30 200/400(5) ms
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time
tBE1
120
800
ms
tBE2
150
1,000
ms
tCE
1
4
s
Notes:
1.
2.
3.
4.
5.
Clock high + Clock low must be less than or equal to 1/fC.
Value guaranteed by design and/or characterization, not 100% tested in production.
Only applicable as a constraint for a Write Status Register instruction when SRP0 bit is set to 1.
For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N =
number of bytes programmed.
Max Value tSE with <50K cycles is 200ms and >50K & <100K cycles is 400ms.
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