DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ALTAIR04-900TR データシートの表示(PDF) - STMicroelectronics

部品番号
コンポーネント説明
メーカー
ALTAIR04-900TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
ALTAIR04-900TR Datasheet PDF : 29 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
ALTAIR04-900
Application information
Figure 10. Timing diagram: normal power-up and power-down sequences
Vin
V Start
Vcc
t
VccON
Vccresta rt
t
DRAIN
5.3
Icharg e
5.5 mA
Po wer - on
Normal operation
CV mode
Normal operation
CC mode
tt
t
P owe r- o ff
Zero-current detection and triggering block
The zero-current detection (ZCD) and triggering blocks switch on the MOSFET if a
negative-going edge falling below 50 mV is applied to the ZCD/FB pin. The triggering block
must be previously armed by a positive-going edge exceeding 100 mV.
This feature detects transformer demagnetization for QR operation, where the signal for
ZCD input is obtained by the transformer auxiliary winding, also used to supply the IC.
Figure 11. ZCD block, triggering block
R zcd ZCD/FB
Rf b
Aux
ZCD
CLAMP
110mV
60mV
BLAN KIN G
TI ME
STAR TER
Fr om CC /CV Block
TU RN -ON
LOGI C
LEB
S
Q
R
F rom OC P
To D riv er
The triggering block is blanked after MOSFET turn-off to prevent any negative-going edge,
following leakage inductance demagnetization, from triggering the ZCD circuit erroneously.
This blanking time is dependent on the voltage on COMP pin: it is TBLANK = 30 µs for
VCOMP = 0.9 V, and decreases almost linearly down to TBLANK = 6 µs for VCOMP = 1.3 V.
The voltage on the pin is both top and bottom-limited by a double clamp, as illustrated in the
internal diagram of ZCD block (see Figure 11). The upper clamp is typically 3.3 V, while the
lower clamp is -60 mV. The interface between the pin and the auxiliary winding is a resistor
DocID18211 Rev 3
13/29
29

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]