13NM60N(2011) データシートの表示（PDF） - STMicroelectronics

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13NM60N
(Rev.:2011)

N-channel 600 V, 0.320 Ω, 10 A PowerFLAT™ (8x8) HV MDmesh™ II Power MOSFET

STMicroelectronics 

STL13NM60N

1

Electrical ratings

Electrical ratings

Table 2.

Symbol

Absolute maximum ratings

Parameter

Value

VDS Drain-source voltage (VGS = 0)

VGS

ID (1)

ID (1)

ID(2)

ID(2)

IDM(2),(3)

PTOT (3)

PTOT(1)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C (steady state)

Total dissipation at TC = 25 °C (steady state)

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

EAS

dv/dt (4)

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Peak diode recovery voltage slope

600

± 25

10

6.5

1.9

1.1

7.6

3

90

3

93

15

Tstg Storage temperature

Tj Max. operating junction temperature

- 55 to 150

150

1. The value is rated according to Rthj-case

2. Pulse width limited by safe operating area

3. When mounted on FR-4 board of inch², 2oz Cu

4. ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-amb(1) Thermal resistance junction-amb max

1. When mounted on 1inch² FR-4 board, 2 oz Cu

Value

1.38

45

Unit

V

V

A

A

A

A

A

W

W

A

mJ

V/ns

°C

°C

Unit

°C/W

°C/W

Doc ID 018870 Rev 1

3/14

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