N-Channel 60-V (D-S) MOSFET
Si7120DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
60
0.019 @ VGS = 10 V
0.028 @ VGS = 4.5 V
PowerPAK 1212-8
ID (A)
10
8.2
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance
D PowerPAKr 1212-8 Package with
Low 1.07-mm Profile
D 100% Rg Tested
APPLICATIONS
D Primary Side Switch
D Synchronous Rectification
D
3.30 mm
S
1
S
3.30 mm
2
S
3
G
4
G
D
8
D
7
D
6
Ordering Information: Si7120DN-T1
D
5
Si7120DN-T1—E3 (Lead (Pb)-Free)
S
Bottom View
N-Channel MOSFET
RoHS
COMPLIANT
Available
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
TA = 25_C
TA = 70_C
L = 0.1 mH
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
60
"20
10
6.3
8.0
5.1
40
3.2
1.3
22
24
3.8
1.5
2.4
1.0
−55 to 150
260
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
t v 10 sec
26
Steady State
RthJA
65
Steady State
RthJC
1.9
33
81
_C/W
2.4
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72771
S-51128—Rev. D, 13-Jun-05
www.vishay.com
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