TE28F010-90 データシートの表示（PDF） - Intel

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TE28F010-90

28F010 1024K (128K X 8) CMOS FLASH MEMORY

Intel 

E

28F010

Table 4. 28F010 Typical Update Power Dissipation(4)

Operation

Notes

Power Dissipation (Watt-Seconds)

Array Program/Program Verify

1

0.171

Array Erase/Erase Verify

2

0.136

One Complete Cycle

3

0.478

NOTES:

1. Formula to calculate typical Program/Program Verify Power = [VPP × # Bytes × typical # Prog Pulses (tWHWH1 × IPP2 typical

+ tWHGL × IPP4 typical)] + [VCC × # Bytes × typical # Prog Pulses (tWHWH1 × ICC2 typical + tWHGL × ICC4 typical].

2. Formula to calculate typical Erase/Erase Verify Power = [VPP (VPP3 typical × tERASE typical + IPP5 typical × tWHGL × #

Bytes)] + [VCC (ICC3 typical × tERASE typical + ICC5 typical × tWHGL × # Bytes)].

3. One Complete Cycle = Array Preprogram + Array Erase + Program.

4. “Typicals” are not guaranteed, but based on a limited number of samples from production lots.

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