2N3904 データシートの表示（PDF） - Fairchild Semiconductor

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2N3904

NPN General-Purpose Amplifier

Fairchild Semiconductor 

Absolute Maximum Ratings(1), (2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

VCEO

VCBO

VEBO

IC

TJ, TSTG

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

40

V

60

V

6.0

V

200

mA

-55 to 150

°C

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty cycle operations.

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Total Device Dissipation

PD

Derate Above 25°C

2N3904

625

5.0

Maximum

MMBT3904(3)

350

2.8

PZT3904(4)

1,000

8.0

Unit

mW

mW/°C

RθJC Thermal Resistance, Junction to Case

83.3

°C/W

RθJA

Thermal Resistance, Junction to Ambient

200

357

125

°C/W

Notes:

3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.

4. Device is mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm, mounting pad for the collector lead minimum 6 cm2.

© 2002 Fairchild Semiconductor Corporation

2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0

2

www.fairchildsemi.com

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