SERGBQA データシートの表示（PDF） - STMicroelectronics
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SERGBQA Datasheet PDF : 34 Pages
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SERCON410B
AC ELECTRICAL CHARACTERISTICS (Continued)
Figure 12. Write Access to DUAL Port RAM
3.4.8 Write Access to Dual Port RAM
Symbol
Parameter
Value
Unit
Min.
Type
Max.
Setup time A10-0, BHEN, MCSN0-1, WRN
(only Motorola mode) to falling edge of
tASU
WRN (Intel mode) or RDN (Motorola mode
0
ns
with low active strobe) or rising edge RDN
(Motorola mode with high active strobe)
Hold time A10-0, BHEN, MCSN0-1, WRN
(only Motorola mode) to rising edge of WRN
tAHD
(Intel mode) or RDN (Motorola mode with low
0
ns
active strobe) or rising edge RDN (Motorola
mode with high active strobe)
tMWRW Pulse width WRN or RDN
30
ns
tDSU
Setup time D15-0 to end of write access
10
ns
tDHD
Hold time D15-0 after end of write access
10
ns
tMBSY
Delay WRN or RDN (begin of write access)
to BUSYN low
35
ns
tMBHWH
Setup time BUSYN high to end of write
access
30
ns
tWR1
WRN and RDN high after end of write
access
40
ns
16/30
®
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